A seamless trench fill method utilizing ozone-assisted sub-atmospheric pressure chemical vapor deposition (SACVD) technique is provided. After the deposition of a SACVD silicon oxide film, the substrate is subjected to a steam anneal that is performed under H2/O2 environment at a relatively lower temperature...http://www.google.es/patents/US7238586?utm_source=gb-gplus-sharePatente US7238586 - Seamless trench fill method utilizing sub-atmospheric pressure chemical vapor deposition technique
Seamless trench fill method utilizing sub-atmospheric pressure chemical ...
