The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconductor thin film,...http://www.google.es/patents/US6984551?utm_source=gb-gplus-sharePatente US6984551 - MIS semiconductor device and method of fabricating the same
MIS semiconductor device and method of fabricating the same
