A method for making 0.25 micron semiconductor chips includes using TEOS as the high density plasma (HDP) inter-layer dielectric (ILD). More specifically, after establishing a predetermined aluminum line pattern on a substrate, TEOS is deposited and simultaneously with the TEOS deposition, excess TEOS...http://www.google.es/patents/US6150285?utm_source=gb-gplus-sharePatente US6150285 - Method for simultaneous deposition and sputtering of TEOS
Method for simultaneous deposition and sputtering of TEOS
