An MOS transistor for use in an integrated circuit is fabricated with a self-aligning contact and interconnect structure which allows for higher packing density. Self-aligning source and drain contacts overlap the gate but are prevented from a short circuiting to the gate by oxide insulation between...http://www.google.es/patents/US5483104?utm_source=gb-gplus-sharePatente US5483104 - Self-aligning contact and interconnect structure
