A method of manufacturing a semiconductor device includes the steps of forming a first insulating layer having a hole on a substrate, selectively forming a conductive layer in the hole, selectively forming a second insulating layer on the first insulating layer, patterning the second insulating layer,...http://www.google.es/patents/US5192714?utm_source=gb-gplus-sharePatente US5192714 - Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited
Method of manufacturing a multilayered metallization structure in which the ...
