The mask part 41 includes a substrate 1, a patterning means 40 and a photoemissive layer 6. The patterning means 40 includes a mask pattern 2, 3 of apertures 3 and masking areas 2 and a modifying layer 4. Ultraviolet radiation 56 is patterned by patterning means 40 before effecting electron emission...http://www.google.es/patents/US4746587?utm_source=gb-gplus-sharePatente US4746587 - Electron emissive mask for an electron beam image projector, its manufacture, and the manufacture of a solid state device using such a mask
Electron emissive mask for an electron beam image projector, its manufacture ...
