In a semiconductor integrated circuit device including a third gate, the present invention improves miniaturization and operation speed and reduces a defect density of an insulator film. In a semiconductor integrated circuit device including a well of a first conductivity type formed in a semiconductor...http://www.google.es/patents/US20020191458?utm_source=gb-gplus-sharePatente US20020191458 - Semiconductor integrated circuit device, production and operation method thereof
Semiconductor integrated circuit device, production and operation method thereof
Número de solicitud: 10/206,982 Número de publicación: US 2002/0191458 A1 Fecha de presentación: 30 Jul 2002 Patente emitida: US6687156 ( Fecha de emisión 3 Feb 2004)
