A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate...http://www.google.es/patents/US7566916?utm_source=gb-gplus-sharePatente US7566916 - Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
Ohmic metal contact and channel protection in GaN devices using an ...
