A semiconductor structure having a high-strained crystalline layer with a low crystal defect density and a method for fabricating such a semiconductor structure are disclosed. The structure includes a substrate having a first material comprising germanium or a Group (III)–Group (V)-semiconductor or...http://www.google.es/patents/US6995427?utm_source=gb-gplus-sharePatente US6995427 - Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same
Semiconductor structure for providing strained crystalline layer on ...
