The process comprises the steps of forming, on top of a semiconductor material wafer, a holed mask having a lattice structure and comprising a plurality of openings each having a substantially square shape and a side with an inclination of 45° with respect to the flat of the wafer; carrying out an anisotropic...http://www.google.es/patents/US6992367?utm_source=gb-gplus-sharePatente US6992367 - Process for forming a buried cavity in a semiconductor material wafer and a buried cavity
Process for forming a buried cavity in a semiconductor material wafer and a ...
