Structures and methods for programmable array type logic and/or memory devices with asymmetrical low tunnel barrier intergate insulators are provided. The programmable array type logic and/or memory devices include non-volatile memory which has a first source/drain region and a second source/drain region...http://www.google.es/patents/US7446368?utm_source=gb-gplus-sharePatente US7446368 - Deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly insulators
Deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly ...
