A planar field effect transistor (FET) includes a plurality of spaced-apart, floating Schottky barrier, epitaxial metal gate electrodes which are embedded within a semiconductor body. A drain electrode and a gate control electrode are formed on one major surface of the body whereas a source electrode,...http://www.google.es/patents/US4249190?utm_source=gb-gplus-sharePatente US4249190 - Floating gate vertical FET
