The present invention relates to an integrated circuit having a MOS capacitor. In one embodiment, a method of forming an integrated circuit comprises forming an oxide layer on a surface of a substrate, the substrate having a plurality of isolation islands. Each isolation island is used in forming a semiconductor...http://www.google.es/patents/US7042064?utm_source=gb-gplus-sharePatente US7042064 - Integrated circuit with a MOS capacitor
