A top metal gate carbon nanotube transistor may be provided which has acceptable electrical characteristics. The transistor may be formed over a structure including a semiconductor substrate made of an epitaxial layer and covered with an insulating layer. The carbon nanotubes may be deposited thereover,...http://www.google.es/patents/US20060180859?utm_source=gb-gplus-sharePatente US20060180859 - Metal gate carbon nanotube transistor
