The invention relates to an improved thin film semiconductor p-n junction device and its method of fabrication, utilizing vacuum deposition techniques, whereby continuous/batch processing may be utilized, capable of mass producing p-n junction devices; e.g. solar cells, with large surface areas and good...http://www.google.es/patents/US4313254?utm_source=gb-gplus-sharePatente US4313254 - Thin-film silicon solar cell with metal boride bottom electrode
Thin-film silicon solar cell with metal boride bottom electrode
