Memory devices and methods for operating such devices are described herein. A method as described herein includes applying a bias arrangement to a memory cell to change the resistance state from a higher resistance state to a lower resistance state. The bias arrangement comprises a first voltage pulse...http://www.google.es/patents/US20100177559?utm_source=gb-gplus-sharePatente US20100177559 - METHOD FOR SETTING PCRAM DEVICES
Número de solicitud: 12/352,534 Número de publicación: US 2010/0177559 A1 Fecha de presentación: 12 Ene 2009 Patente emitida: US8107283 ( Fecha de emisión 31 Ene 2012)
