A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate and an insulating layer formed of a metal oxide-nitride such as MnOmxNx, wherein M is a metallic or semi-metallic element or combination of metallic and/or semi-metallic elements...http://www.google.es/patents/US20020089023?utm_source=gb-gplus-sharePatente US20020089023 - Low leakage current metal oxide-nitrides and method of fabricating same
Low leakage current metal oxide-nitrides and method of fabricating same
