An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 1019 dopant atoms per...http://www.google.es/patents/US7180923?utm_source=gb-gplus-sharePatente US7180923 - Laser employing a zinc-doped tunnel-junction
