An insulated gate semiconductor device comprising an insulator substrate having provided thereon a source and a drain region; a channel region being incorporated between said source and said drain regions, said channel region comprising a polycrystalline, a single crystal, or a semi-amorphous semiconductor...http://www.google.es/patents/US7649227?utm_source=gb-gplus-sharePatente US7649227 - Semiconductor device and method of forming the same
Semiconductor device and method of forming the same
