A first insulator is formed on a base layer. A first conductor is formed on the first insulator. The first conductor is patterned. A second insulator is formed over the first insulator. A via hole is formed in the second insulator and is electrically coupled to the first conductor through the via hole....http://www.google.es/patents/US20010024153?utm_source=gb-gplus-sharePatente US20010024153 - High-Q inductive elements
Número de solicitud: 09/867,281 Número de publicación: US 2001/0024153 A1 Fecha de presentación: 29 May 2001 Patente emitida: US6377156 ( Fecha de emisión 23 Abr 2002)
