An improved memory device based on a non-volatile variable resistance element is disclosed. The resistive element is based on a semiconductor having a resistivity which is determined by the state of polarization of a ferro-electric layer. The semiconductor forms one plate of a parallel plate capacitor...http://www.google.es/patents/US5119329?utm_source=gb-gplus-sharePatente US5119329 - Memory cell based on ferro-electric non volatile variable resistive element
Memory cell based on ferro-electric non volatile variable resistive element
