A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage. ...http://www.google.es/patents/US20060033132?utm_source=gb-gplus-sharePatente US20060033132 - Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors
Low dark current image sensors with epitaxial SiC and/or carbonated channels ...
Número de solicitud: 11/198,292 Número de publicación: US 2006/0033132 A1 Fecha de presentación: 8 Ago 2005 Patente emitida: US7585707 ( Fecha de emisión 8 Sep 2009)
