A suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced onto the backside of wafers being processed in a CVD reactor during the deposition of tungsten or other metals, metal nitrides and silicides, to avoid deposition of material on the backside...http://www.google.es/patents/US5374594?utm_source=gb-gplus-sharePatente US5374594 - Gas-based backside protection during substrate processing
Gas-based backside protection during substrate processing
