A memory cell includes a first electrode, a second electrode, and phase change material between the first electrode and the second electrode. The phase change material has a step-like programming characteristic. The first electrode, the second electrode, and the phase change material form a via or trench...http://www.google.es/patents/US8084799?utm_source=gb-gplus-sharePatente US8084799 - Integrated circuit with memory having a step-like programming characteristic
Integrated circuit with memory having a step-like programming characteristic
