A memory system includes a ferroelectric memory formed by arranging a plurality of memory cells having a ferroelectric capacitor and cell transistor, a flash EEPROM formed by arranging a plurality of memory cells having a floating gate and capable of electrically erasing and writing data, a control circuit...http://www.google.es/patents/US7397686?utm_source=gb-gplus-sharePatente US7397686 - Memory system combining flash EEPROM and FeRAM
