Disclosed is a long-life GaN-based semiconductor device which is achieved by reducing the operating voltage of the semiconductor device comprising a GaN-based or a ZnSe-based compound semiconductor formed on a sapphire substrate and by preventing the electromigration of metal atoms from an electrode...http://www.google.es/patents/US5889295?utm_source=gb-gplus-sharePatente US5889295 - Semiconductor device
