CMOS gate dielectric made of high-k metal silicates by passivating a silicon surface with nitrogen compounds prior to high-k dielectric deposition. Optionally, a silicon dioxide monolayer may be preserved at the interface. ...http://www.google.es/patents/US20040023462?utm_source=gb-gplus-sharePatente US20040023462 - Gate dielectric and method
Número de solicitud: 10/210,421 Número de publicación: US 2004/0023462 A1 Fecha de presentación: 31 Jul 2002 Patente emitida: US6919251 ( Fecha de emisión 19 Jul 2005)
