Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material region(s) advantageously have a low dislocation density and, in particular, a low screw dislocation...http://www.google.es/patents/US7687827?utm_source=gb-gplus-sharePatente US7687827 - III-nitride materials including low dislocation densities and methods associated with the same
III-nitride materials including low dislocation densities and methods ...
