A high density integrated circuit structure, for example a dynamic memory cell, is described which includes an active/passive device in combination with a capacitor structure. The capacitor structure is of the polysilicon-oxide-silicon type and is formed on the sidewalls of a mesa-shaped and dielectrically...http://www.google.es/patents/US4704368?utm_source=gb-gplus-sharePatente US4704368 - Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor
Method of making trench-incorporated monolithic semiconductor capacitor and ...
