A bonding pad that has low parasitic capacitance and that transmits little or no stress to the underlying metal layer during bonding, along with a process for manufacturing it, is described. A key feature of this structure is that the damascene wiring directly below the bonding pad has been limited to...http://www.google.es/patents/US6426555?utm_source=gb-gplus-sharePatente US6426555 - Bonding pad and method for manufacturing it
