A nanocrystal memory element and a method for fabricating the same are proposed. The fabricating method involves selectively oxidizing polysilicon not disposed beneath and not covered with a plurality of metal nanocrystals, and leaving intact the polysilicon disposed beneath and thereby covered with...http://www.google.es/patents/US7393745?utm_source=gb-gplus-sharePatente US7393745 - Method for fabricating self-aligned double layered silicon-metal nanocrystal memory element
Method for fabricating self-aligned double layered silicon-metal nanocrystal ...
