An integrated dynamic memory cell having a small area of extent on a semiconductor substrate is described. The memory cell has a selection MOSFET with a gate connection area that is connected to a word line, a source connection doping area which is connected to a bit line, and a drain connection doping...http://www.google.es/patents/US6534820?utm_source=gb-gplus-sharePatente US6534820 - Integrated dynamic memory cell having a small area of extent, and a method for its production
Integrated dynamic memory cell having a small area of extent, and a method ...
