US 20040053496A1
(19) United States
(12) Patent Application Publication (io) Pub. No.: US 2004/0053496 Al
Choi (43) Pub. Date: Mar. 18,2004
(54) METHOD FOR FORMING METAL FILMS
(76) Inventor: Eun-Seok Choi, Ichon-shi (JP)
Correspondence Address:
JACOBSON, PRICE, HOLMAN & STERN
PROFESSIONAL LIMITED LIABILITY
COMPANY
400 Seventh Street, N.W. Washington, DC 20004 (US)
(21) Appl. No.: 10/329,522
(22) Filed: Dec. 27, 2002
(30) Foreign Application Priority Data
Sep. 17, 2002 (KR) 2002-56460
Publication Classification
(51) Int. CI.7 11011. 21 44
(52) U.S. CI 438/680; 438/686
(57) ABSTRACT
A method for forming a metal thin film is suitable for suppressing the deterioration of a throughput according to enlarging a purge time to prevent the metal precursor from mixing with a reaction gas in a reactor during the deposition of an atomic layer. The method includes the steps of flowing a reaction gas into a reactor loaded therein a substrate, flowing a metal precursor in a pulse form into the reactor, activating the reaction gas by exiting a plasma in a pulse form to change with a pulse of the metal precursor in the reactor, alternately and depositing a metal thin film in a unit of an atomic layer by reacting the activated reaction gas with the metal precursor.
