Compound semiconductor device and method for producing the same

United States Patent

[19]

Kishimoto et al.

US006133592A [ii] Patent Number: 6,133,592 [45] Date of Patent: *Oct. 17,2000

[54] COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

[75] Inventors: Katsuhiko Kishimoto, Nara; John Kevin Twynam, Tenri; Naoki Takahashi, Nara, all ol Japan

[73] Assignee: Sharp Kabushiki Kaisha, Osaka, Japan

[ * ] Notice: This patent issued on a continued prosecution application filed under 37 CFR 1.53(d), and is subject to the twenty year patent term provisions ol 35 U.S.C. 154(a)(2).

[21] Appl. No.: 08/802,126

[22] Filed: Feb. 19, 1997

[30] Foreign Application Priority Data

Feb. 19, 1996 [JP] Japan 8-031043

[51] Int. CI.7 H01L 29/78; H01L 33/00

[52] U.S. CI 257/190; 257/191

[58] Field of Search 257/190, 191,

257/197, 199, 198, 103

5,373,185 12/1994 Sato 257/587

5,604,356 2/1997 Shiraishi .

FOREIGN PATENT DOCUMENTS

430595 6/1991 European Pat. Off. .

OTHER PUBLICATIONS

M. Hasegawa et al., Technical Report oflEICE, ED93-167, MW93-124, pp. 69-74 (1994).

B. Bayraktaroglu et al., IEEE Electron Device Letters, 14(10):493-495 (1993).

Primary Examiner—Stephen D. Meier

Attorney, Agent, or Firm—Dike, Bronstein, Roberts &

Cushman, LLP; David G. Conlin; George W. Neuner

[57] ABSTRACT

A compound semiconductor device includes a contact structure having a plurality ol layers provided on a compound semiconductor layer and an electrode provided on the contact structure. The contact structure includes a first contact layer made ol IacGa1_;lAs (0.9 = x=l) on the side closest to the electrode.

10 Claims, 6 Drawing Sheets