[54] SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FOR CONNECTING SEMICONDUCTOR REGION AND ELECTRICAL WIRING METAL VIA TITANIUM SILICIDE LAYER AND METHOD OF FABRICATION THEREOF
[75] Inventors: Hiromi Todorobaru, Kashiwa; Hideo Miura, Koshigaya; Masayuki Suzuki, Kokubunji; Shinji Nishihara; Shuji Ikeda, both of Koganei; Masashi Sahara, Kodaira; Shinichi Ishida, Higashimurayama; Hiromi Abe, Tokyo; Atushi Ogishima, Tachikawa; Hiroyuki Uchiyama; Sonoko Abe, both of Higashimurayama, all of Japan
[73] Assignee: Hitachi, Ltd., Tokyo, Japan
[ * ] Notice: This patent issued on a continued prosecution application filed under 37 CFR 1.53(d), and is subject to the twenty year patent term provisions of 35 U.S.C. 154(a)(2).
[21] Appl. No.: 08/747,392
[22] Filed: Nov. 12, 1996
[30] Foreign Application Priority Data
Nov. 14, 1995 [JP] Japan 7-295220
Feb. 20, 1996 [JP] Japan 8-031655
[51] Int. C I. H01L 23/48
[52] U.S. CI 257/754; 257/755; 257/763;
257/768; 257/770
[58] Field of Search 257/753, 759,
257/755, 763, 764, 768, 769, 770; 438/301
