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USO07531839B2

<12) United States Patent <10) Patent No.: US 7,531,839 B2

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FOREIGN PATENT DOCUMENTS

EP 0 588 370 3/1994

(Continued) OTHER PUBLICATIONS

T. Y0 shihara, Time Division Full Color LCD by Ferroelectric Liquid Crystal, Ekisho, vol. 3, N0. 3, Jul. 25, 1999, pp. 190-194.

(Continued)

Primary Examiner—Marcos D. Pizarro (74) Attorney, Agent, or Firm—Eric J . Robinson; Robinson Intellectual Property Law Office, P.C.

(57) ABSTRACT

TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are fonned on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to fonn first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is fonned in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.

21 Claims, 28 Drawing Sheets

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Page 2 U.S. PATENT DOCUMENTS EP 0 738 012 10/1996 JP 56-111258 9/1981 4,851,363 A 7/1989 Troxell et al. jp 60_127761 7/1935 5,170,244 A 12/1992 Dohjo et al. jp 3_020046 1/1991 5,217,910 A 6/1993 Shimizu et al. jp 3_095933 4/1991 5,247,190 A 9/1993 Friend et al. jp 3_095939 4/1991 5,292,675 A 3/1994 Codama jp 04_253160 9/1992 5,306,651 A 4/1994 Masumo et al. jp 04_369271 12/1992 5,323,042 A 6/1994 Matsumoto jp 05_102433 4/1993 5,399,502 A 3/1995 Friend et al. jp 06_143635 5/1994 5,401,982 A 3/1995 King et al. jp 6_291314 10/1994 5,413,945 A 5/1995 Chien et al. jp 07_130652 5/1995 5,528,397 A 6/1996 Zavracky et al. jp 07_235630 9/1995 5,532,176 A 7/1996 Katada et al. jp 03_073329 3/1996 5,563,427 A 10/1996 Yudasaka et al. jp 03_116065 5/1996 5,583,369 A 12/1996 Yamazaki et al. jp 03_264734 10/1996 5,594,569 A 1/1997 Konuma et al. jp 03_274336 10/1996 5,643,826 A 7/1997 Ohtani et al. jp 09_191111 7/1997 5,686,328 A 11/1997 Zhang et al. jp 09_293600 11/1997 5,705,424 A 1/1998 Zavracky et al. jp 10_065131 3/1993 5,736,750 A 4/1998 Yamazaki et al. jp 10_092576 4/1993 5,764,206 A 6/1998 Koyama et al. jp 10_104659 4/1993 5,786,241 A 7/1998 Shimada jp 10_135463 5/1993 5,830,787 A 11/1998 Kim jp 10_135469 5/1993 5,923,962 A 7/1999 Ohtani et al. jp 10_233511 9/1993 5,949,107 A 9/ 1999 Zhang JP 10-294280 11/1998 5,953,582 A * 9/1999 Yudasaka et al. ............ .. 438/29 jp 11_191623 7/1999 6,001,714 A 12/1999 Nakajima et al. jp 11_345767 12/1999 6,030,667 A 2/2000 Nakagawa et al. jp 11_354442 12/1999 6,087,679 A 7/2000 Yamazaki et al. jp 2000_216399 3/2000 6,096,585 A 8/2000 Fukuda et al. jp 2000_299469 10/2000 6,114,715 A 9/200° Hmada KR 2000-0013704 3/2000 6,133,074 A 10/2000 Ishida et al. W0 W0 90/13143 11/1990 6,140,667 A * 10/2000 Yamazaki et al. ........... .. 257/59 6,166,414 A 12/2000 Miyazaki et al. 6,198,133 B1 * 3/2001 Yamazaki et al. ......... .. 257/347 OTHER PUBLICATIONS 6,222,238 B1 4/2001 Chang et ab R. Shimokawa et al., Characterization of High-Eficiency Cast-Si 6,278,131 B1 8/2001 Yamazakl et a1~ Solar Cell Wafers by MBIC Measurement, Japanese Journal of 6,281,552 B1 8/2001 K=1W=1S_=11<i <->H11~ Applied Physics, vol. 27, No. 5, May 1, 1988, pp. 751-758. 215383351 13/5331 31325512, ¥2§";§?f2,°§,§-§,,"252251ffZ;,‘Z’%'Z,?,$;‘Z,Z’,I"féi§”§f€€P€,f,ii€;§i 122514 %1:lP4u41Z1:1;a‘; 41 <6)f International Electron Devices Meeting, Dec. 7, 1997, pp. }:)nl:;Z:‘tk;18t 31' Schenk it al., Polymers for Light Emitting Diodes, EuroDisplay 634203758 Bl 7/2002 Nakajima 19999,9The 1393 3Ii7iternat1ona1 Display Research Conference, Sep. 6-9, 6507069 Bl 1/2003 Zhang et a1‘ S. Inuiapet al. Thresholdless Antiferroelectricity in Liquid Crystals 654l294 Bl 4/2003 Yamazaki et 31' and itsApplication to Displays, J. Mater. Chem., vol. 6, No. 4, Jan. 1, 6,590,230 B1 7/2003 Yamazaki et al. 1996 pp‘ 671673‘ 6,599,785 B2 7/2003 Hamada et al. ’ . . . B1 e 6,664,145 B1 12/2003 Yamazaki et al. 199941)‘ 1316‘ ’ ' ’ ' ’ 677397l Bl 8/2004 Zhang et T. Yoshida et al., 33.2." A Full-Color Thresholdless Antiferroelectric 67777l6 Bl 8/2004 Yamazakl eta1' LCD Exhibiting Wide J/iewing Angle with Fast Response Time SID 680360l B2 10/2004 Nakajima 97 Di est‘ SID International S osium Di est of Technical Pa ers 6,906,383 Bl 6/2005 Zhang et 51. Jan £51937 8414444 YIPP "5 P ’ 6,972,435 B2 12/2005 Ohtani HFP’_17’§j Ch 7' . Z. 4 D . . S 4 P I _ 7,202,499 B2 4/2007 Nakajima . urue, . arac eris ics an I I riving c eme of oymer 7 301 209 B2 11/2007 Takemura et 41‘ Stabilized Monostable FLCD Exhibiting Fast Response Time and ’ ’ - High ContrastRatio with Gray-Scale Capability, SID 98 Digest: SID 2002/0134983 A1 9/2002 Yamazaki . . . . 2005/0007494 Al 1/2005 Yamazaki et 41‘ International Symposium Digest of Technical Papers, Jan. 1, 1998, 2005/0104068 Al 5/2005 Yamazaki PP" 782785"

FOREIGN PATENT DOCUMENTS

EP 0 589 478 3/1994

Office Action (Korean Patent Application No. 10-2007-0020342)
Dated Oct. 21, 2008.

* cited by examiner

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