US 20010004479A1
(19) United States
(12) Patent Application Publication (io) Pub. No.: US 2001/0004479 Al
CHEUNG et al. (43) Pub. Date: Jun. 21,2001
(54) PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS
(76) Inventors: DAVID CHEUNG, FOSTER CITY, CA
(US); WAI-FAN YAU, MOUNTAIN
VIEW, CA (US); ROBERT P.
MANDAL, SARATOGA, CA (US);
SHIN-PUU JENG, CUPERTINO, CA
(US); KUOWEI LIU, CAMPBELL,
CA (US); YUNG-CHENG LU, SAN
JOSE, CA (US); MIKE BARNES,
SAN RAMON, CA (US); RALF B.
WILLECKE, SANTA CLARA, CA
(US); FARHAD MOGHADAM, LOS
GATOS, CA (US); TETSUYA
ISHIKOWA, SANTA CLARA, CA
(US); TZE POON, SAN FRANCISCO,
CA (US)
Correspondence Address:
PATENT COUNSEL
APPLIED MATERIALS INC
P O BOX 450-A
SANTA CLARA, CA 95052
(*) Notice: This is a publication of a continued prosecution application (CPA) filed under 37 CFR 1.53(d).
(21) Appl. No.: 09/185,555
(22) Filed: Nov. 4, 1998
Related U.S. Application Data
(63) Continuation-in-part of application No. 09/021,788, filed on Feb. 11, 1998, now Pat. No. 6,054,379. Continuation-in-part of application No. 09/114,682, filed on Jul. 13, 1998, now Pat. No. 6,072,227. Continuation-in-part of application No. 09/162,915, filed on Sep. 29, 1998.
Publication Classification
(51) Int. CI.7 C23C 16/00; C23C 8/00
(52) U.S. CI 427/553; 427/585
(57) ABSTRACT
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of mefhylsilane, CH3SiH3, or dimefhylsilane, (CH3)2SiH2, and nitrous oxide, N20, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.
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