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OTHER PUBLICATIONS
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Ahn, Kie Y, "Atomic Layer Deposited Titanium Aluminum Oxide Films", U.S. Appl. No. 10/931,533, filed Aug. 31, 2004, client ref. No. 04-0579.
Ahn, Kie Y, "Atomic Layer Deposition of Hf3N4/Hf02 Films as Gate Dielectrics", U.S. Appl. No. 11/063,717, filed Feb. 23, 2005, 04-1248.
Ahn, KieY, et al., "Atomic Layer Deposition of Zirconium-Doped Tantalum Oxide Films", U.S. Appl. No. 10/909,959, filed Aug. 2, 2004.
Ahn, KieY, "Atomic Layer Deposition of Zr3N4/Zr02 Films as Gate
Dielectrics", U.S. Appl. No. 11/058,563, filed Feb. 15,2005.
Ahn, Kie Y, "Hybrid ALD-CVD of PrXOY/Zr02 Films as Gate
Dielectrics", U.S. Appl. No. 11/010,766, filed Dec. 13, 2004,
04-0997.
Ahn, Kie Y, "Ruthenium Gate For a Lanfhanide Oxide Dielectric Layer", U.S. Appl. No. 10/926,812, filedAug. 26,2004, client ref No. 04-0538.
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* cited by examiner
