(12) Umted States Patent (10) P1116111 No.: US 8,071,443 B2 Ahn et al. (45) Date of Patent: Dec. 6, 2011 (54) METHOD OF FORMING LUTETIUM AND 6,090,636 A 7/2000 Geusic eH11~ LANTHANUM DIELECTRIC STRUCTURES 2 1§;1r§§‘;IS1ftZ§a1~ _ 631503188 A 11/2000 GGUSIC 6161. (75) Inveniorsi K19 Y-AhI1,ChaPPaq11a,NY (US); 6,191,448 B1 2/2001 FOIDGS 6161. Leonard Forbes, Corvallis, OR (US) 6,198,168 B1 3/2001 Geusic et al. 6,203,613 B1 3/2001 Gates et al. (73) Assignee: l(\{IJiSc;‘on Technology, Inc., Boise, ID 5233:: 6,365,470 B1 4/2002 Maeda _ _ _ _ _ 6,380,579 B1 4/2002 Nam 6161. ( * ) Not1ce: Subject to any d1scla1mer, the term ofth1s 6,381,168 B2 4/2002 Forbes patent is extended or adjusted under 35 6,399,979 B1 6/2002 Noble et al. USC_ 1540:’) by 0 days 6,407,424 B2 6/2002 Forbes 6,418,050 B2 7/2002 Forbes 6,429,065 B2 8/2002 Forbes (21) APP1- NO-1 12/837,303 6,432,779 B1 8/2002 Hobbs 6161. (22) Filed: Jul. 15,2010 (Continued) (65) Prior Publication Data FOREIGN PATENT DOCUMENTS EP 1096042 A1 5/2001 US 2010/0276748 A1 Nov. 4, 2010 (Continued) Related U.S. Application Data OTHER PUBLICATIONS (62) Division of application No. 11/823,727, filed on Jun. Blauwe, J D, .,NanOCrySta1 nonvolatile memory devices”, IEEE 28, 2007, noW Pat. No. 7,759,237. TmnS‘NanOteChnO1‘,(2002),72_77‘ (51) Int. Cl. (Continued) H01L 21/336 (2006.01) (52) U.S. Cl. ............... .. 438/257; 438/591; 257/E21.209 Primary Examiner I Q119C D Hoang (58) Field Of Classification Search ................ .. 438/257, (74) Attorney. Agent. or Firm I Schwegman, Lundberg & 438/266, 591; 257/314, 316, E21.209, E21.423 Woessnen PA See application file for complete search history. (57) ABSTRACT (56) References Cited Methods of forming dielectric structures are shoWn. Methods
of forming dielectric structures are shoWn that include lutetium oxide and lanthanum aluminum oxide crystals embedded Within the lutetium oxide. Specific methods shoWn include monolayer deposition Which yields process improvements such as chemistry control, step coverage, crystallinity/ microstructure control.
24 Claims, 4 Drawing Sheets
DEPOSIT A FIRST LUTETIUM OXIDE LAYER
DEPOSIT LANTHANUM ALUMINUM OXIDE
NANOCRYSTALS
EMBED LANTHANUM ALUMINUM OXIDE
NANOCRYSTALS WITH A SECOND LUTETIUM OXIDE
LAYER
5,274,249 A 12/1993 Xi et al.
5,840,897 A 11/1998 Kirlin et al.
5,852,306 A 12/1998 Forbes
5,923,056 A 7/1999 Lee et al.
5,981,350 A 11/1999 Geusic et al.
6,025,225 A 2/2000 Forbes et al.
6,057,271 A 5/2000 Kenjiro et al.
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FORM A CONTROL GATE OVER THE SECOND
LUTETIUM OXIDE LAYER
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