United States Patent [i9] [ill Patent Number: 5,392,189
Fazan et al.  Date of Patent: Feb. 21,1995
 CAPACITOR COMPATIBLE WITH HIGH DIELECTRIC CONSTANT MATERIALS HAVING TWO INDEPENDENT INSULATTVE LAYERS AND THE METHOD FOR FORMING SAME
 Inventors: Pierre C. Fazan; Gurtej S. Sandhu, both of Boise, Id.
 Assignee: Micron Semiconductor, Inc., Boise, Id.
[21} Appl. No.: 104,524
 Filed: Aug. 10,1993
Related U.S. Application Data
 Continuation-in-part of Ser. No. 44,331, Apr. 2, 1993.
 Int. CI.6 H01G 1/01
 U.S. a 361/305; 361/303;
361/311; 361/313; 361/321.1; 257/306;
 Field of Search 361/303, 305, 311, 312,
361/313, 321.1, 322; 427/79, 81; 437/52, 60; 365/145, 149; 257/303, 304, 305, 306, 310, 532,
 References Cited
U.S. PATENT DOCUMENTS
5,005,102 4/1991 Larson 361/313
5,046,043 9/1991 Miller etal 365/145
5,111,355 5/1992 Anandetal 361/313
5,185,689 2/1993 Maniar 361/313
5,198,384 3/1993 Dennison 437/52
5,248,628 9/1993 Okabe et al 437/60
5,340,765 8/1994 Dennison et al 437/52
Primary Examiner—Bruce A. Reynolds
Assistant Examiner—Gregory L. Mills
Attorney, Agent, or Firm—Susan B. Collier
The invention is a storage cell capacitor and a method for fonning the storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an oxidation resistant layer. A thick insulative layer protects the sidewalk of the barrier layer during the deposition and anneal of a dielectric layer having a high dielectric constant. The method comprises forming the conductive plug in a thick layer of insulative material such as oxide or oxide/nitride. The conductive plug is recessed from a planarized top surface of the thick insulative layer. The barrier layer is then formed in the recess. The process is continued with a formation of a second insulative layer, a potion of which is removed to form an opening exposing a portion of the barrier layer. An oxidation resistant conductive layer is deposited in the recess and forms at least a portion the storage node electrode of the capacitor. Next a dielectric layer having a high dielectric constant is formed to overly the storage node electrode and a cell plate electrode is fabricated to overly the dielectric layer.
20 Claims, 23 Drawing Sheets