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United States Patent u<q

Yamagata et al.

US0054O58O2A

[li] Patent Number: [45] Date of Patent:

III

5,405,802 Apr. 11,1995

[54] PROCESS OF FABRICATING A SEMICONDUCTOR SUBSTRATE

[75] Inventors: Kenji Yamagata, Kawasaki; Takao Yonehara, Atsugi, both of Japan

[73] Assignee: Canon Kabushiki Kaisba, Tokyo, Japan

[21] Appl. No.: 249,067

[22] Filed: May 25,1994

Related U.S. Application Data

[63] Continuation of Ser. No. 10,847, Jan. 29, 1993, abandoned.

[30] Foreign Application Priority Data

Jan. 31, 1992 [JP] Japan 4-016511

[51] Int.Cl.« H01L 21/302

[52] U.S. CI 437/71; 437/84;

437/86; 437/83; 437/974; 148/33.5

[58] Field of Search 437/71, 83, 84, 86,

437/974; 148/DIG. 135, DIG. 150, 33.5

[56] References Cited

U.S. PATENT DOCUMENTS

4,177,094 12/1979 Kroon 437/86

4,501,060 2/1985 Fryeetal 29/576 W

4,891,329 1/1990 Reismau et al 437/974

5,013,681 5/1991 Godbey et al 437/83

5,028,558 7/1991 Haisma et al 437/974

FOREIGN PATENT DOCUMENTS

0256713 11/1986 Japan 437/83

0084014 4/1988 Japan 437/83

0102244 5/1988 Japan 437/83

4-212409 8/1992 Japan 437/83

4-241414 8/1992 Japan 437/83

4-346414 12/1992 Japan 437/84

OTHER PUBLICATIONS

Cullen, "Single-Crystal Silicon on Non-Single Crystal Insulators", J. Cryst. Growth, vol. 63, No. 3, Oct., 1983, pp. 429-590.

Easter et al., "Polysilicon to Silicon Bonding etc.," Ext. Abst., vol. 91-2, p. 707, Abst. 478, Fall Meeting, Electrochem. Soc, Oct. 1991.

Primary Examiner—R. Bruce Breneman
Assistant Examiner—Ramamohan Rao Paladugu
Attorney, Agent, or Firm—Fitzpatrick, Cella, Harper &
Scinto

[57] ABSTRACT

A process for preparing a semiconductor substrate comprises a step of porousifying a silicon monocrystalline substrate to form a porous layer, a step of making a silicon monocrystalline thin film to epitaxially grow on a surface of the porous layer, a step of oxidizing the surface of the epitaxial growth layer, a step of forming a deposited film on the oxidized surface, thereby obtainig a first substrate, a step of closely contacting the deposited film of the first substrate to a second substrate, a step of heat treating the closely contacted substrates and a step of selectively etching the porous layer.

12 Claims, 12 Drawing Sheets

FIG. IA<

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