Method for manufacturing a semiconductor device and suppressing the ...

United States Patent m

Kamijo et al.

[li] Patent Number: 4,931,405 [45] Date of Patent: Jun. 5,1990

[54] METHOD FOR MANUFACTURING A
SEMICONDUCTOR DEVICE AND
SUPPRESSING THE GENERATION OF
BULK MICRODEFECTS NEAR THE
SUBSTRATE SURFACE LAYER

[75] Inventors: Hiroyuki Kamijo, Yokohama;

Yuuichi Mikata, Kawasaki, both of
Japan

[73] Assignee: Kabushiki Kaisha Toshiba, Kawasaki, Japan

[21] Appl. No.: 306,716
[22] Filed: Feb. 6,1989

[30] Foreign Application Priority Data

Feb. 8, 1988 [JP] Japan 63-26917

[51] Int CI.* H01L 21/265

[52] U.S. CI 437/12; 437/24;

437/26; 437/29; 437/47

[58] Field of Search 437/20, 24, 26, 28,

437/29, 11, 47, 52, 69, 70, 72, 12

[56] References Cited

U.S. PATENT DOCUMENTS 4,762,802 8/1988 Parrillo 437/24

FOREIGN PATENT DOCUMENTS

131717 1/1985 European Pat. Off. .

58- 39014 3/1983 Japan 437/20

59- 56575 4/1984 Japan 437/20

59-108366 6/1984 Japan 437/20

60- 39824 3/1985 Japan 437/20

62-210627 9/1987 Japan .

OTHER PUBLICATIONS

Journal of the Electrochemical Society, vol. 134, No. 4,
Apr. 1987, pp. 1018-1025, L. Jastrzebski et al.
IEEE Electron Device Letters, vol. EDL-6, No. 12,
Dec. 1985, pp. 659-661, S. S. Wong.
Extended Abstracts, vol. 86-1, No. 1, May, 1986, Ab-
stract No. 197, pp. 283-284.

Primary Examiner—Olik Chaudhuri

Attorney, Agent, or Firm—Finnegan, Henderson,

Farabow, Garrett and Dunner

[57] ABSTRACT

A method for manufacturing a semiconductor device is disclosed which selectively forms in a one-conductivity type semiconductor device a deep impurity-diffused area at over 1100° C. in an H2 gas atmosphere containing N2, Ar, Ne, He and a combination thereof.

4 Claims, 5 Drawing Sheets

/z

16' 14'

O2