A first interlayer dielectric film layer is formed on a P-type semiconductor substrate. The first interlayer dielectric film is made of a BPSG film formed by the method of atmospheric pressure chemical vapor deposition. First connection holes are formed at specified positions of the first interlayer...http://www.google.es/patents/US5459353?utm_source=gb-gplus-sharePatente US5459353 - Semiconductor device including interlayer dielectric film layers and conductive film layers
Semiconductor device including interlayer dielectric film layers and ...