A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing...http://www.google.es/patents/US7037813?utm_source=gb-gplus-sharePatente US7037813 - Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
Plasma immersion ion implantation process using a capacitively coupled ...
