The present invention provides a method for depositing a dielectric stack comprising forming a dielectric layer atop a substrate, the dielectric layer comprising at least oxygen and silicon atoms; forming a layer of metal atoms atop the dielectric layer within a non-oxidizing atmosphere, wherein the...http://www.google.es/patents/US7521345?utm_source=gb-gplus-sharePatente US7521345 - High-temperature stable gate structure with metallic electrode
High-temperature stable gate structure with metallic electrode
