In a memory cell (110) having multiple floating gates (160), the select gate (140) is formed before the floating gates. In some embodiments, the memory cell also has control gates (170) formed after the select gate. Substrate isolation regions (220) are formed in a semiconductor substrate (120). The...http://www.google.es/patents/US7169667?utm_source=gb-gplus-sharePatente US7169667 - Nonvolatile memory cell with multiple floating gates formed after the select gate
Nonvolatile memory cell with multiple floating gates formed after the select ...
