It is an object of the present invention to provide a manufacturing method of semiconductor device whereby the number of processes is decreased due to simultaneously forming a contact hole in a lamination film of different material and film thickness (inorganic insulating film and organic resin film...http://www.google.es/patents/US20050200767?utm_source=gb-gplus-sharePatente US20050200767 - Semiconductor device and manufacturing method thereof
Semiconductor device and manufacturing method thereof
Número de solicitud: 11/101,315 Número de publicación: US 2005/0200767 A1 Fecha de presentación: 7 Abr 2005 Patente emitida: US7633085 ( Fecha de emisión 15 Dic 2009)