A memory device as described herein includes a memory member contacting first and second interface structures. The first interface structure electrically and thermally couples the memory member to access circuitry and has a first thermal impedance therebetween. The second interface structure electrically...http://www.google.es/patents/US7893418?utm_source=gb-gplus-sharePatente US7893418 - Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
Phase change memory cell having interface structures with essentially equal ...
