An array threshold voltage test mode for a flash memory device is disclosed. During the test mode, a test voltage is routed directly to the gates of the flash memory transistors selected by a given address. If the test voltage causes the selected transistors to change state by crossing their threshold...http://www.google.es/patents/US6550028?utm_source=gb-gplus-sharePatente US6550028 - Array VT mode implementation for a simultaneous operation flash memory device
Array VT mode implementation for a simultaneous operation flash memory device
